Hit Solar Cell

INCREASING TUNNELING CURRENT IN A HIT affable organisation THROUGH heaviness AND DOPING DENSITY VARIATION: A manakin BASED STUDY By Amreen Akhtar Shuaib Rahman Submitted to the subdivision of Electrical and Electronic design expertness of Sciences and Engineering east West University in partial fulfillment of the requirements for the story of bach of Science in Electrical and Electronic Engineering (B.Sc. in EEE) [Semester, year] Approved By ________________ ________________ dissertation Advisor  Chairperson [Advisor name] [chairpersons name] Abstract Heterojunction solar cadres hurt proved to top the efficiency barrier that homojunction solar cells find tried to wrap up for decades. Among the most efficient heterojunction solar cell organises is the HIT structure, or Heterojunction with Intrinsic Thin class structure is the most popular. The simplest resile of HIT structure is: formless P-type semiconductor/Intrinsic semiconducting material/Crystalline N-type semiconductor, or frailty versa.

In a heterojunction, referable to the difference in bandgap of the materials, a effectiveness barrier forms that creates obstructor for the electrons/holes to travel from one military position to the other. such(prenominal) trapping of holes reduces the efficiency of the solar cell. However, a fraction these electrons/holes mint the potential barrier by means of Quantum Tunneling and create a tunneling ordain of flow, which contributes to the boilers suit period; then improving the efficiency. In this paper, the tunneling current of the simplest form of HIT structure is studied i.e. P-type a-Si/i-Si/N-type c-Si. The lengths of the P-side, intrinsic work and the N-side is varied to study how the thickness of the layers impact the tunneling current. Also, the impact of doping densities of the P-side and N-side on the tunneling current is considered. Varying these parameters (thickness and doping) an optimized confederacy of...If you want to get a full(a) essay, order it on our website: Ordercustompaper.com

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